feb.1999 mitsubishi semiconductor triac ? BCR30AM medium power use non-insulated type, planar passivation type BCR30AM application contactless ac switches, light dimmer, on/off and speed control of small induction motors, on/off control of copier lamps, microwave ovens ?i t (rms) ...................................................................... 30a ?v drm ..............................................................400v/600v ?i fgt ! , i rgt ! , i rgt # ........................................... 50ma symbol v drm v dsm parameter repetitive peak off-state voltage ] 1 non-repetitive peak off-state voltage ] 1 voltage class unit v v maximum ratings 8 400 500 12 600 720 symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight conditions commercial frequency, sine full wave 360 conduction, t c =75 c 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a 2 s w w v a c c g ratings 30 300 378 5 0.5 10 2 C40 ~ +125 C40 ~ +125 4.8 ] 1. gate open. type name voltage class f 3.2?.2 19.5 min 23 1 2?.3 1.0?.2 5.45 15.9 max 5.0 20.0?.5 2 4 4.5?.3 1.5?.2 2.8?.3 5.45 4 0.6?.2 * 4 24 1 3 1
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4 t 1 terminal t 2 terminal gate terminal t 2 terminal outline drawing dimensions in mm to-3p * measurement point of case temperature
feb.1999 10 0 23 5710 1 200 100 23 5710 2 44 300 400 500 0 4.4 2.4 0.8 0.4 1.2 1.6 2.0 2.8 3.2 3.6 4.0 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t c = 25? maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) mitsubishi semiconductor triac ? BCR30AM medium power use non-insulated type, planar passivation type ] 2. measurement using the gate trigger characteristics measurement circuit. ] 3. the critical-rate of rise of the off-state commutating voltage is shown in the table below. ] 4. the contact thermal resistance r th (b-f) in case of greasing is 0.3 c/w. symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c parameter repetitive peak off-state current on-state voltage gate trigger voltage ] 2 gate trigger current ] 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage test conditions t j =125 c, v drm applied t c =25 c, i tm =45a, instantaneous measurement t j =25 c, v d =6v, r l =6 w , r g =330 w t j =25 c, v d =6v, r l =6 w , r g =330 w t j =125 c, v d =1/2v drm junction to case ] 4 unit ma v v v v ma ma ma v c/w v/ m s typ. ! @ # ! @ # electrical characteristics test conditions voltage class 8 12 v drm (v) 400 600 min. 20 20 commutating voltage and current waveforms (inductive load) (dv/dt) c symbol r l r l unit v/ m s 1. junction temperature t j =125 c 2. rate of decay of on-state commutat- ing current (di/dt) c =C16a/ms 3. peak off-state voltage v d =400v limits min. 0.2 ] 3 max. 3.0 1.6 2.5 2.5 2.5 50 50 50 1.2 supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c performance curves
feb.1999 10 0 23 10 1 5710 2 23 5710 3 23 5710 4 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ? v gt = 2.5v v gm = 10v i fgt i, i rgt i, i rgt iii v gd = 0.2v p g(av) = 0.5w p gm = 5w i gm = 2a 10 2 0.2 0.4 23 10 ? 5710 0 23 5710 1 23 57 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 23 10 2 5710 3 0 10 1 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 3 2 60 100 140 4 4 ?0 0 40 80 120 typical example 10 1 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 3 2 60 100 140 4 4 ?0 0 40 80 120 i rgt i, i rgt iii i fgt i typical example 30 20 50 0 10 40 50 40 30 20 10 0 360 conduction resistive, inductive loads 160 120 100 60 20 0 40 0 40 80 140 10 20 30 curves apply regardless of conduction angle resistive, inductive loads maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) allowable case temperature vs. rms on-state current case temperature (?) rms on-state current (a) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance (?/ w) conduction time (cycles at 60hz) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature (?) gate trigger voltage vs. junction temperature junction temperature (?) gate characteristics 100 (%) gate trigger current (t j = t?) gate trigger current (t j = 25?) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 ? ) mitsubishi semiconductor triac ? BCR30AM medium power use non-insulated type, planar passivation type
feb.1999 60 40 20 140 ?0?0 ?0 0 80 100 120 10 1 10 3 7 5 3 2 10 2 7 5 3 2 4 4 typical example 40 60 40 20 160 120 100 60 20 0 140 ?0 80 140 ?0 ?0 0 80 100 120 typical example 140 40 ?0 ?0 ?0 0 20 60 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 typical example allowable ambient temperature vs. rms on-state current ambient temperature (?) rms on-state current (a) repetitive peak off-state current vs. junction temperature junction temperature (?) breakover voltage vs. junction temperature junction temperature (?) holding current vs. junction temperature junction temperature (?) 160 120 100 60 20 0 40 0 40 80 140 10 20 30 160 160 t2.3 120 120 t2.3 100 100 t2.3 all fins are black painted aluminum and greased natural convection curves apply regardless of conduction angle commutation characteristics critical rate of rise of off-state commutating voltage (v/?) rate of decay of on-state commutating current (a /ms) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/?) 100 (%) breakover voltage ( dv/dt = xv/? ) breakover voltage ( dv/dt = 1v/? ) 160 0 23 10 1 5710 2 23 5710 3 23 5710 4 80 60 40 20 100 120 140 typical example t j = 125? i quadrant iii quadrant 10 0 10 2 7 5 3 2 10 1 23 5710 2 10 1 7 5 3 2 23 5710 3 4 4 44 typical example t c = 125? i t = 4a t = 500? v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value 100 (%) holding current ( t j = t c ) holding current ( t j = 25 ? ) 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 ? ) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 ? ) mitsubishi semiconductor triac ? BCR30AM medium power use non-insulated type, planar passivation type
feb.1999 gate trigger current vs. gate current pulse width gate current pulse width (?) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i fgt i i rgt iii i rgt i typical example mitsubishi semiconductor triac ? BCR30AM medium power use non-insulated type, planar passivation type 6 w 6 w 6 w 6v 6v 6v r g r g r g a v a v a v test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits
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